学术活动
Asymptotic behavior of solutions to Euler-Poisson Equations for bipolar semiconductor models
2015-01-06
来源：科技处 供稿：科技处 点击次数：单位： 数学科学学院
主讲人：Professor Ming Mei（McGill University and Champlain College St.-Lambert, Canada）
时间：1月6日（周二）16:00-17:00
地点：必赢76net线路官网北二区教学楼 516 教室
摘要：In this talk we study the Cauchy problem for 1-D Euler-Poisson system, which represents a physically relevant hydrodynamic model but also a challenging case for a bipolar semiconductor device by considering two different pressure functions and a non-flat doping profile. Different from the previous studies for the case with two identical pressure functions and zero doping profile, we realize that the asymptotic profiles of this more physical model are their corresponding stationary waves (steady-state solutions) rather than the diffusion waves. Furthermore, we prove that,when the flow is fully subsonic, by means of a technical energy method with some new development, the smooth solutions of the system are unique, exist globally and time-algebraically converge to the corresponding stationary solutions. The optimal algebraic convergence rates are obtained.
